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UNITED STATES E
"' CLEAR REGULATORY COMMISSIC a
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WASHINGTON, D. C. 20$55 TO:
John Cooper, Chief Radioisotopes Licensing Section NMSS, Region III FROM:
William O. Miller, Chief License Fee. Management Branch Office of Administration
SUBJECT:
LICENSE F$E INFORMATION
' Applicant / Licensee NOMI4dd MNb
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l13614#Y City / State License No, M ad///I~22 Control No.
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Fee Information:
Type of fee ('
ndment
()' Renewal
( ) Application hNuf14,
Check No.
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Amount $
Fee Category Date Check Rec'd OK to issue:
Amendment Renewal Signed d
A LicenseFeeManahntBranch h
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Additional Date Fee Due Aw e#
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JUL 2 31980 Form 2 2
g jCj h 22 g 9 970106 NEITZEL96-314 PDR a
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Monsanto
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- tLtcynonc encoucrs MONSANTO COMMERCIAL PftODUCTS CO.
P. O. B o n 8 St, Peters. Missoure 63376 Phone: (314) 272-0281 TWX (910) 760-2941 April 14, 1976 Mr. Douglas Weiss Nuclear Regulatory Commission JLicense Fee Management Branch Washington, D.C. 20555
Dear Mr. Weiss:
Our check for the required $1,000.00 fee for the radiation manu-facturing license as specified in fee category 3B of Part 170 as per your letter dated April 7 is enclosed.
Thank you very much for your assistance in obtaining both licenses.
- Regards, b.
ohn W. Burd Manager, Materials Technology JWB:bh l
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2 e unit of Monsente Company
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f ece,al Fo;w avons. Pvt 170.Tr a heers,4, c4'<.py s' cu's te sta'e s ;n item t6 and trie app ror,r s*e fee enclosed (Sc t hote in instruction Sheet)..
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Monsanto Commercial Products Coirp+ af Electronic Products Division An Operating Unit of Monsanto Company P.O. Box 8
' 800 North Lindbergh Boulevard Mo. Highway 79 at U.S. Interstate 70
'St. Louis, Missouri 63166 St. Peters, Mo. 63376 (314) 694-1000 (314) 272 6281 J3o - yggt/
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Richard P. Virtue - Process Engineer Fcrrest V. Williams - Quality Assurance l Bobbie D. Stone - Engineering Fellow Manager Elmer W. Schramm - Safety Supervisor Richard Massey - Research Technician P.Uw&it OF Miuscualts OF EACH CMEmiCAL ANQ/04 PHYS.
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1rradiated silicon rod will be ground to exact dimensions, etched with an HNO HF 3
mixture to remove surface damage, sliced into wafers with a diamond saw, and the wafers etched and subsequently polished on one or both sides. Customers may put wafer through a series of high temperature (900-1300 ) diffusion steps, etch it ead finally break it into chips approx. 0.020" square. Other customers will incorporate entire wafer in a rectifier after undergoing high temperature diffusions.
Final end uses for devices include rectifiers and silicon control rectifiers. Uses of integrated circuits made from 0.020" square chips include computers, digital watches.
calculators, radios and sound equipment.
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Certified seal d sources or solutions containina the isotopes of interest are used to determine instrunient counting efficiencies for the measurement conaitions sed.- This.w ni be done uarterl au s,octs. coswints Asa siO AssAv,~r@aouns usuY., na 6.e.,..,-.r, ~,w.s.s.6
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Eberline Instrument Corp., P.O. Box 2108, Sante Fe, N. Mex. 87501 now supplies i
L.F. radiation detection badge service to the St. Peters plant. Personnel receiving and monitoring irradiated silicon will be monitored with these badges.
ItNOT.T.'./iflON To l'.E suW.lTTLD ON ADDITIONAL SHEETS IN DUPLICATE is. # ACitmu ANs eOvntst.
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See Sections 12 and 15 of attached document,
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,8 Sce Section 17 of atti N i Csi.11:lC/ ale Orils itcm must be com;:l;tect by emplicent) ie. Trft APPtlC ANT AND ANY OPPIC At talcuTING THis CittsfiCAf t CDs $t mad Of TH! APPLICANT N Amt3 IN litu I, Cithf Y IMAI1Ml$ AMPCd
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PtitattD IN CON'OtuffY WifH fiftt iO, CODI Of f tDttAt P!Gutati3Ns PAtf 30. A?:D TM AT Att INFO 2p ATION CONTAINED MtPtfN, INCL',0?.". J '
- Dot AND t.ttit surf.&tM!NTs AT1 ACH!D Nttt10. Is TRUt AND COtRICf 10 iMI list Of OUR KnowNonsanto donmercial Products C 50.00(3L)
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U February 23, 1976 Manager - Materials Technology o..
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M;aJSANTO COMME 6CIAL PAODUCTS CO.
P. Oc son 8 1
St. Pel s e s, IAs s o u r $3376 Pt r s. 314 2 72 - c 281 TWx feiO. 760 2341 i
February 23, 1976 i
Mr. Douglas Weiss Nuclear Regulatory Commission License Fee Management Branch Washington, D.C. 20555
Dear Mr. Weiss:
i Enclosed are two copies of our Application for a Byproduct Material License relating to the receipt, use, distribution and transfer of se.?iconductor grada silicon that has been doped by irradiation in a nuclear reactor.
The application and support-
'ing documentation has been prepared to conform wi~ch Title 10. Code of Federal Regulations, Part 30. We will, of course, be happy to provide any further information required in support of the appli-i cation.
Our check for the required $50 fee is also enclosed.
Sincerely yours,
. v.6 + iu, d
' John W. Burd Manager, Materials Technology JUB:bh COIL U I"n.'
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SUPPORTING' DATA FOR A SPECIFIC LICENSE TO OWN, POSSESS, DISTRIBUTE AND TRANSFER ~ NEUTRON-D0 PED SILICON
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- ' F Monsanto Comercial Products Company An Operating Unit of Monsanto Comparv
I 1
. 6 Table of Contents-Page 1
- 1. -
Introduction 2-2.
Description of Silicon 3
3.
Description.of. Intended Use of Neutron-Doped Silicon 5
4.
Method of Byproduct Introduction 5.
Initial Concentration of Byproduct Material 8
6.
-Control Methods on Byproduct Introduction 9
7.
- Time Interval Between Irradiation and Release from the
-10 Reactor Facility 8.
Determination of the Concentration of Byproduct Impurity 11 Levels 9.
Potential for Concentration of Byproduct Materials 12 13
- 10..
Why a' Lower Level is Not Practical 11.
Why the Product is Not likely to be Used in Humans 14 12.
Description of Facilities
]
A.
- Silicon Manufacturing Facilities - St. Peters, Missouri 15 h
B.
Nucicar Reactor Facilities 16
.C.
Radiation. Inspection Facilities at St. Peters 18
]
D.
Other Monsanto Facilities 19 13.
References 21
-14.
Personnel and Training A.
List of Personnel 22 B.
Specific Training of Personnel 23 C.
Radiation Training Seminar 24
'15 Specific Facilities for Irradiated Silicon 26 if.-
Pedi?ticr. Protection Prcgrcm 27 17.
Haste Disposal 28 l
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INTP900CT10N The Electronic Products Division of lionsanto Commercial Products Company, an operating unit of-iionsanto Company, desires to receive silicon which has been irradiated in a nuclear reactor facility to j
offect nuclear transmutation doping and then to distribute and transfer
~ the silicon to electronic davice unufacturers.
Although byproduct material is not functional in silicon, some may be.present-as a result of activation of trace level impurities.
The information in the following sections is in support of an
- 5 application for a-specific license to possess and use neutron-doped silicon pursuant to Section 30.33 of 10 CFR Part 30 and an application
'for a specific license t,o distribute neutron-doped silicon under the
, rovisions of Section 32.11 of 10 CFR Part 32.
p Pursuant to Section 30.32(d) of 10 CFR Part 30 a single application is being-filed covering both of'these activities.
1 j
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2.
DESCRIPTION OF SILICON Very pure single crystals of silicon which contain carefully controlled trace quantities of selected inpurities are the major starting material for the solid state electronics industry.
The Electronic Products Division of the "onsanto Ccar.arcial Products Company presently produces these high purity single crystals of i
silicon by the float-zone and Czochralski methods. The as-grown crystals range in size up to 100 mm. in diameter and 30 inches in length.
These crystals are further modified into ground rods of j
exact diameters and into lapped and/or polished wafers ranging in i
thickness from 0.010" to 0.030".
Both the wafer thickness and the electrical resistivity are critical parameters in fabrication of the electronic devices in which the silicon is used.
The resisti-j vity is controlled by adding trace amounts of certain impurities and in the conventional process, these impurities are introduced during crystal growth.
A recent advance in the art of introducing controlled trace 4
l impurities into the very pure silicon is by the nuclear transmuta-tion of a ' portion of the silicon into phosphorus.
1
v 3.
DE5CRI?i;010F INf E:50 USE OF N'0JTl10N-00 PED SILICON l
Pure single crystals of silicon doped with a few parts per billion j
of boron or phosphorus are manufactured by the Electronic Products Divi-
]
sion of the Monsanto Commercial Products Company and distributed to j
electronic device manufacturers.
The silicon, in the form of wafers, is used to fabricate mini-and microcircuits and as the active sections of silicon rectifiers.
Previously, doping of the silicon has been accom-l plished by adding trace amounts of the desired impuritic; fJring growth of the crystals. This produces materials that are of limited uniformity on a microscale and are homogeneous on a macroscale in doping material concentration to only about + 25%.
This non-uniformity and limited pre-f cision has been acceptable in the past but will not be in the future as microcircuitry becomes smaller and more complex and higher reliability f
is demanded of rectifiers.
It has been shown that neutron transmutation of Si to produce n-type silicon, (wherein the majority carriers are elec-trons), overcomes both these problems.
(Ref.2,3.) The transmutation 3
of 30 i to 31P to produce a uniform and precise doping of silicon semi-S conductor material to n-type material is a desirable commercial process yielding a product that is superior to material made by existing processes.
Bulk pieces or wafers are irradiated at a reactor with thermal neu-trons to transmute a small amount of saSi to,31Si which decays with a 3 P.
2.62 hour7.175926e-4 days <br />0.0172 hours <br />1.025132e-4 weeks <br />2.3591e-5 months <br /> half-life to The r'eaction is:
P,
+
S-3 30 i_
Si S_
+
n
+
+
th The underlined isotopes, which are the initial and desired product, are stable. The concentration C of transmuted phosphorus is:
p 4
t a
n (30Si)
C
=
p where:
2 the thermal neutron flux (n/cm -sec) c
=
theradiationtime(sec.)
t
=
the cross section for 30Si(n,y)=
e
=
2 0.10 x 10 24 cm
_4 4
n (! Si)
the number of 30Si atoms /cc in the sample
2 1.52 x 101 atoms /cc n(30511 10 The :3ncentration C 4t a
=
ppb n (Si) x And -he resistivity after proper annealing of the silicon because of t. e transmuted phosphorus is:
31.1 R=
9 6__ _
=
Cppb 4 t x 10 '
P Since the minimum desired resistivity is s 4 ohm-cm, the maximum l
expc:-ure will be a fluence et < 8 x 1018 n/cm sec.
All material 2
will be used in solid form in electronic devices; such as, rectifiers i
and -icrocircuits. After irradiation both bulk pieces and slices will be a nealed at 41100 C to remove radiation damage.
To make slices, 4
the :alk pieces will then be sliced and polished into wafers.
The i
wafe s will be sold to electronics manufacturers who will deposit cir-cuit; on these silicon substrates and heat treat and section them.
1 The nicrocircuits or rectifiers will then be incorporated into cir-cuitJ or rectifiers.
I i
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. 5-4 o
4.
~METi10D OF-BYPRODUCT IllTRODUCTION The purpose of the neutron irradiation is to. produce the stable isotope 31P by the (n,y) reaction on 30Si and allowing for the decay 31 i to 31P..There are, however, other reactions associated of:the 5
uith thE sil', con that prcduca byproduct materials and there can be a few parts-per-billion impurities in the silicon which lead to byproduct material.
The following reactions on the silicon should be considered:
31P
+
s-(1) l 30Si (n,y) 31Si 2.62 hr.
+
I 323
+
g-(2) 3:P 14.3 d
. n,y) 31P
(
+
27 j
+
g+
(3) 3 28 i (n,2n) 27Si 4.25 s S
+
s+
(4) 30Si
+
31P (n,2n) 30P 2.5 m
+
2831
+
g-(5) 28Si (n,p) 2 sal 2.27 m
+
293j
+
g (6) 2sSi (n,p) 29Al 6.52 m
+
31P
+
8 (7) 31P (n,p) 31S1 2.62 hr
+
27Al
+
8 (8) 27
+
j 30 1 (n,4)
Mg.
9.5 m 5
2ssi
+
g-(9) 31P (n,4) 2aA1 2.27 m
+
i Following irradiation, the silicon is allowed to decay for several days and consequently only the combination of reactions (1) and (2) of those above results in byproduct materials. At the time of discharge from the reactor following an irradiation in a thermal neutron flux of l
4 x 1012 n/cm2-sec for 348 hours0.00403 days <br />0.0967 hours <br />5.753968e-4 weeks <br />1.32414e-4 months <br /> the 32P activity will be about 2.2 x 10 3 p Ci/gm. This is the highest 32P activity level expected in any of the silicon and corresponds to a resistivity of about 4 ohm cm.
In 32P activity all cases, the 'rradiated silicon will be held until the is less :har, the exempt concentration of 2 x 10' uCi/gm listed in Sac-tion 30.70 of 10 CFR Part 30. Table 4-1 shows the expected initial 32p level as a function of resistivity for different flux densities.
i Other byproducts can be_ introduced by the neutron activation of trace impurities within the lattice of the single crystals and of con-taminates on the outer surface. The presence of some trace impurities of only a-few parts per billion in the lattice significantly affects the resistivity or minority carrier lifetime of the semiconductor material n
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I Table 4-1 32 Computer-Calculated. Values of. Radioactivity.from P in Neutron-
' Doped. Silicon and-Times-Required to Decay to NRC Exempt' Levels a -
Silicon Deutron Flux Radiation Ra di oa cti vi ty Time to Decay Times at Discharge to 2.0 x 10 4 Resistivity (n cm-2 s e c-1 )_
(Hrs)
(u Ci/gm) u Ci/gm (days)
'(Ohm Cm)
-;)
~j.
5 2.5 x
1013 45.0 1.70 x 10-3 45 1.25 x
10 3 90.0 1.65 x 10-3 44 1
4.0 x
1012 290-1.59 x 10-3 43
~ 10 :
1160 1.0 x
10-3 33 1
1.0 x
ii 11.3 2.5 x
10 13 20.0 2.37 x 10-4 4
1.25
.x 10 13
-40.0 3.37 x 10-4 11 T
4.0 x
10 2 123 2.93 x 10-4 8
1 1.0 x
1012 493 2.37 x '10-4 4
25 2 '. 5 x
1013 9.0 3.35 x 10-5 0'
1.25 x
1013 18.0
'4.63 x 10-5 0
l
' l, -
50 2.5 x
1013 4.50 5.28 x 10-6 0
1.25 x
1033 9.0 8.37 x 10-6 0
-l 1
-100 2.5 x-1013 2.25 7.53 x 10-7 0
1.25 x
10 13 4.50 1.32 x 10-6 0
150 2.5 x
1013 1.5 2.34 x 10-7 0
1.25 x
1023 3.0 4.27 x 10-7 0
k
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and therefore, manufacturing procedures have been developed to yield very-pure crystals.
In addition, the semiconductor silicon resistivity j
-and minority carrier lifetime are measured prior to irradiation t.o verify its suitability.
These neasurements provide an initial test to prevent
.l a piece of silicon containing more than trace quantities of impurities fec.a being irrudisted.
Conta.i.ir.ctes on the outar surface of the' silicon will be removed prior.to and following. irradiation.
One available clean-ing method, which has been found to be very effective, is described in reference (9).
Also, in nearly.all cases, it is practical to etch away the surface of the silicon with a mixture of nitric and hydrofluoric
~
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acids before processing it further.
This is obviously the most efficient.
way of removing byproduct material from the surface and this has been verified experimentally.
Decontamination of the surface will be performed i
4 l
b
.at the reactor facility after irradiation by one, or both, of the a ove techniques to the cxem9t concentration level before releasing the material to l'onsanto.
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5.
ItilTIALCONCENTRATIONOFBYPRODUCTMATERIAL.
As indicated in part 3, the. byproduct materials are produced in the process of nuclear transmutation doping of silicon and are not. con-tributors to the usefulness of the end product.
Surface contamination results in the greatest initial quantity L
of byproduct material. The activation products of silicon are well i
known with only 32P being significant and then only for the high fluence-irradiations. Activation of trace impurities within the crystals has not been found to result in byproduct material approaching exempt concentra-tions._ The initial 32P radioactivity level is given in Table 4-1 as a function of silicon resistivity.
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6.
CONTROL METHODS ON BYPRODUCT INTRODUCTION l
The device manufacturers' electrical resistivity requirements
{j for high purity silicon single crystals determine the neutron fluence, i}'
and thus, the amount of byproduct' material within the silicon.
The initial resistivity and minority. carrier lifetimes are extremely sensi--
tive detection measurements for electrically active and heavy' metals trace 1 mpurities. These measurements are routinely performed on all i
]
silicon crystals prior to irradiation and any abnormal impurity levels would very likely be detected by these methods.
The silicon is cleaned prior to irradiation and then is wrapped in aluminum foil and helf-arc seal welded into aluminum capsules.
This 4
. procedure reduces the surface contamination which makes subsequent handling easier. After irradiation the silicon is checked for surface 4
contaminates and cleaned again at the reactor facility if contaminants
,y are found.
l Since the doping concentration is directly dependent upon the
- total neutron fluence, the irradiation time and thermal neutron flux are controlled to' within about five percent' of the desired fluence.
i Therefore, the activation products of silicon can be accurately cal-culated.
t-4 i
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TlME INTERVAL BETWEEN 1RRADIAT10N Atl0 RELEASE FROM Tite REACTO Allowing about one week follow'ng irradiation for the radioactivity in the capsule to decay before opening dictates the minimum time interval between irradiation and shipment. The silicon will be held at the reac-tor 'tcility until it is determined that a combination of cleaning and radioactive decay results in all isotope concentrations being less than the exempt concentrations in Section 30.70 of 10 CFR Part 30.
Computer calculated decay times for a variety of resistivities and flux densities are shown in Table 4-1.
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[JFJff.. INAT:0N OF THE CC';CEUU.ATION OF 37P200UCT I':. URITY LE'!ELS.
All irradiated silicon will be surveyed with a good thin window G-M survey meter which has sufficient sensitivity to detect likely by-products' at'the concentrations listed in Section 30.70 of 10 CFR Part 30.
If no radioactivity above exempt concentrations is detected the silicon will be transferred from the reactor facility to Monsanto.
If radioactivity Lis detectable with the G-M survey meter, then the silicon will be monitored with a pulse height analyzer. system (see
~
Section'12) to. identify the specific isotopes and to determine the con-centrations.
Silicon will not be transferred from the reactor facility to Monsanto unless the byproduct concentrations are within the limits specified in'Section 30.70 of 10 CFR Part 30.
After receipt' frcm the rcactor facility, the irradiated silicon will again be surveyed with a good thin window G-M survey meter and with a ficw-proportional counter calibrated to confirm that the concen-trations of 52P are within the limits specified in Section 30.70 of 10 CFR Part 30.
Further processing of the neutron-doped silicon will not be~ perfor. mad except en material within the limits specified in Section 30.70 of 10 CFR Part 30.
- ,... v --
9.
POTENTI AL F0_R C0jlCENTRAT101 Of BYPROD_UCT MATERI ALS_
Since any byproduct materials which may be present serve no useful function, there is no incentive for aryone to attempt to separate or collect the materials.
'a practical ir.achanisrr, has bean identif'2d by..Mch the byproduct materials could be inadvertently concentrated.
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71279
.1 10.
1.'HY A 1.0U2P. LEVEL 15 SOT PRACTICAL The resistivity of the silicon semi-conductor material is in inverse proportion to the concentration of phosphorus in the silicon.
The amount of transmuted phosphorus is directly proportional to the total ocutron. fivu.ce. T1.cr0 fore, to reach required rasistivity, a required fluence of thermal neutrons is specified.
This produces a 31Si which decays with a half-life of 2.62 hours7.175926e-4 days <br />0.0172 hours <br />1.025132e-4 weeks <br />2.3591e-5 months <br /> i
predictable amount of 31P with thermal neutrons to give to 31P. The subsequent reaction of
= 14.3 days) to 32S is responsible 32P which decays with s caission (tg
~
for the byproduct radioactivity associated with irradiated silicon.
Thus the level of initial radioactivity is inversely proportional to the desired resistivity.
With regard to impurities, the silicon stock from which the crystals are made is as pure as one finds in any industrial production f
and only ppb or low p;;m levcis of itcpurities are fcund ir, it.
This is 1
the state-of-the-art except for research grade material.
- Moreover, routine measurcrents made to control the quality of the silicon as a I
semi-conductor r.aterial serve to indicate the presence of at least I
some possible contaminants at the ppb level.
p
-14 a
- 11.
j,'MY THE PRODUCT is !.07 LIKELY TO BE USED IN HUMANS _
j I-j The input and product of'the silicon transmutation process are
~
solids.which are quite inert. - These have at most only remote contact
-l l
with the human. ingestion cycle. All material will be parts of elec-l j '
tronic devices which will be external to humans. The contact with l:
humans will be similar to. the glow discharge readouts on hand'calcu-f' lators and the fluorescent dials:of watches.
l After irradiation, surface contamination may be removed from the j
bulk or wafers by etching. This cleaning, if required, will be done
- - i 1
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at the reactor facility.
All solvents will be handled by the reactor
)
l facilities procedures for handling potentially radioactive wastes.
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'12.
DESCRIPTIO. 0F FACILITIES l
- A.
Silicon Manufacturing Facilities - St. Peters, Missouri i
The Electronics Division of the Monsanto Conenercial Products Company operates a fully integrated, high purity silicon manufac-l turing. plant at St. Peters,flissouri. High purity polycrystalline silicon is neoduced by the high-temoerature reduction of trichloro-silane with hydrogen. The polycrystalline silicon is then converted into dislocation-free single crystal silicon by either the float-zone or Czochralski crystal growth processes.. The single crystal silicon is further processed by a variety of shaping operations to I
provide the entire spectrum of physical forms required by the elec-tronic industry, i.e., ground rod, etched rod, plain slices, etched slices, lapped slices, polished slices or suitable combinations of the foregoing.
In addition to Manufacturing Line Supervision, the facility organization includes, at present, a Quality Assurance Section staffed with four professionals; a Materials Technology Group of ten professionals, and a Safety Director whose responsibility includes compliance with State and Federal (including OSHA) safety requirements.
Although it is not a nuclear facility, the St. Peters plant has the physical facilities and staff personnel to carry out a rigorous F
enforcement of the safety and environmental regulations related to the handling of exempt concentrations of byproduct material in a manu-i facturing environment.
A separate room will be maintained for the receipt of irradiated silicon from the reactor facility, checking it for byproduct radio-activity and scheduling it for further processing.
All irradiated r.: tem pric. to Ri; unt till be stored ir. this recr. or in anothar dedicated for this purpose.
i
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i B.
NUCLEAR REACTOR FACILITIES It is anticipated that'for the present, at least, the bulk of the Electronic Products Division's neutron irradiation of silicon will be performed at the University of Missouri-Research Reactor located at Columbia, Missouri.
These facilities are described briefly below.
but it should not be implied that the neutron irradiation of silicon will' necessarily be limited to this single reactor facility.
The University of Missouri Research Reactor (MURR) is the highest power, highest neutron flux reactor at a university in the U.S.A.
It' is 'a 10 l'W, light water reflected flux trap reactor. The facility is operated by the University of Missouri as a University-wide facility-and is located in the University Research Park, Columbia, Missouri.
]
The reactor was licensed by the Atomic Energy Commission on j
October 11, 1963.
Criticality was attained cn October 13, 1966, and a power level of 5 li.1 s,zs attained on June 30, 1967. The present licensed power level of 10 MW was attained on July 18, 1974.
Two general locations are available in the reactor for the neutron irradiation of silicon.
One of these locations is located in the graph-ite reflector and is capable of accomodating silicon rods or slices up to 2-inches in diameter. The second location consists of an all-alumi-num fixture located in the bulk pool position and is capable of accomo-dating silicon rods or slices up to 3-inches in diameter.
Nominal thermal neutron flux densities for these locations are given in the following Table 12-1.
T! Y e 12-1 Thermal lleutron Flux Data University of Missouri Research Reactor Maximum Flux Average Flux (n/cm - sec)
(n/cm -sec.)
2 e
Position Graphite-2.5 x 10 3 2 x 1013 1
Bulk Pool A x 1012 3 x 1012 i
e i The following analyzing equipment is available at _ the University Reactor facility.
It will be used, as required, to assure that the byproduct levels of the irradiated silicon arn within the limits for exempt concentrations and that shipments to the St. Peters facilities are within the limits for exempt quantities.
Pulse Height Analyzer j.
2 t,095 Chsanel r
1 - 400 Channel Nuclear Chicago Model 37-2, with x-y plotter,
]
typewriter, punch tape or magnetic tape, and automatic inte-gration i
2 - 400 Channel Victoreen PIP-400, with x-y plotter, telewriter l
or punch tape 1 - 400 Channel Hewlett-Packard Model 5400 A, with digital printer 1 - 256 Channel Nuclear Data Model 102, with x-y plotter and tele-
)!
writer 1 - 256 Channel Radiation Counting Lab Model 21003 1 - Automatic sample changer, Nuclear Chicago Medal uith 3' x 3' l
NaI detector and 100 sample capacity
~
1 - Automatic Pici.ir Liquid Scintillation Detector, 200 sample capa-city with telewriter and 3 channel refrigerated system 1 - Single Channel Nuclear Chicago Model 8725 j
2 - Single Channel General Electric Type NB53A, with scaler and count rate meter f
Scalers (Health Physics Section) 1 - Nuclear Chicago Model 8166 1 - Nuclear Chicago Model 8770 j
1 - Nuclear Chicago Model 8775 Detectors 1 - I;al scintillation detector, 2" x 2' (flat) 1 - Nal scintillation detector, 3" x 3" (flat) 4 - NaI scintillation detector 3" x 3" (well-type) 1 - Gas-flow Beta detector, Nuclear Chicago Model D-47 2 - Germanium (lithium) Gamma detector, Princeton Ga=a Tech (horizer. :;
1 - Silicon (lithium) x-ray detector, Ortec Model 7013-08 (vertical) 1 - Automatic Planchet Sample Change, Nuclear Chicago Model 1152 Spect c Shield, with t'oCel 5702 dectda c:aler (Health Physics Section)
-71279
_ _ ~ _.
a 13-C.
' PA01 AT10N I!!SPECT10N FACILITIES AT ST. PETERS, MISSOURI The St. Peters Silicon Plant will have an inspection facility for the measurcnsnt of all shipments and lots of irradiated silicon entering or leaving the site.
The inspection facility will serve a dual function: (i) to double-check and insure that all irradiated sili-l con received at St. Peters contains no more than exempt concentrations
~
of byproduct catarials prior'to fa d.u pcacessing, and (ii) that all
-shipments of irradiated silicon from the St. Peters site contain no more than exempt concentrations and quantities of byproduct materials.
The radiation inspection facility will be under the direction of
.a trained radiation protection officer (see section 14) who will be
. responsible for strict adherence to applicable regulations governing byproduct materials in exempt concentrations.
He will also be respon-t sible for the necessary records pursuant to Section 32.12 of 10 CFR Part 32.
Radiation Detection Instrumants available in the inspection faci-lity will consist of the follexing:
1 - Eberline Portable Gas-Proportional Counter Model PAC-4G with AC-21B "a" ~ probe and Audio Speaker Model SK-1 1 - Eberline Mini-Scaler MS-2 with HP-210 Geiger detector and SPA-3 Gamma probe 1 - Victoreen Thyac III, Model 489-4 survey meter 1 - Beta calibration standard 1 - Gamma calibration standard a'
y '. 4 9 *
~_
- _ _. ~. _ _ _ _ _ _
D.
OTHER M01SANTO FACILITIES-In addition to the facilities and staff at St. Peters where irradiated silicon would be received and undergo further process-I -
ing, certain facilities and functions at Monsanto World Headquarters located at 800 N. Lindbergh Blvd., St. Louis County, Mo. are avail-able-to support the St. Peters endeavor.
These include the labora-tory operated by the Technology Planning and Evaluation Department, Applied Sciences, of the Monsanto Industrial Chemicals Company (a second operating unit of Monsanto Company). This laboratory is
+
equipped for the preparation of research quantities of labeled com-l pounds and in carrying.out radiotracer work for a variety of groups in Monsanto.
It is licensed under USAEC By-Product License 24-01113-14, i
Amendment 13. which allows receipt of up to 2.05 Curies of radioiso-topes as irradiated specimens. These laboratory facilities are avail-able for some radiochemical work on irradiated silicon on a contract basis and a considerable emount of such work has been carried out 4
there. Ihreover, the Radiation Officer for this Licensee, presently, Mr. Donald B. Hines, an experienced radiochemist, is available for con-sultation on all matters relating to radioactivity.
The following equipm5nt is located at the Applied Science Laboratory at the 800 N. Lindbergh address and is available for special work on determining radioactivity levels in selected samples and in calibrating the survey instruments:
1 - Nuclear Measurement Corp.
Flow proportional counter with a two-inch 2 x Mylar covered window 2 - Packard Model 3365 Liquid Scintillation Spectrometer 2 - Gamma Spectrometer (Single channel) 1 - Ebarlir.e FP.". 4-3 tc.uipped with Hewlett-Fackard Model 210, 2" window GM tube detector 1 - Victoreen 440 Ion changer for Dosimetry Additional corporate staff functions residing at the Lindbergh loca-tion have overall responsibility for insuring ccmpliance with govern-mental and insurance carrier regulations for all of Monsanto Company.
These functions incluce:
1 i
The Medicine and Environmental Health Department, responsible for industrial. hygiene and the environmental impact of all Monsanto products; The Safety and Property Protection Section of the Central Engineer-ing Department, responsible for certifying the adherence of all new f
operations to "casanto S6fety ~ standards; and 1
LThe Environmental Control Department of the' Central Engineering.
J Department, responsible for the des'ign and operating efficiency of.
environmental control devices in operating plants..
~
- These facilities and staff functions will be used to insure that monitoring and control procedures are adequate to meet regulatory requirements and protect the safety of Monsanto employees.
l 1
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13.
PEFJRENCES n
- 1.
Schwein1er, H.C., J. Appl. Physics 30 No. 8, 1125 (1959) i 2.
Tanenbaum, M. and Mills, A.D., J. Electrochem Soc. 108_,
j 1711(1961).
l 3.
Tanenbaum, M. " Uniform N-Type Silicon".U.S. Patent 3,076,732 Feb.
5, 1963.
4.
Haas, W. E. and Schn*oller, M.S. " Nuclear Transmutation Doping of Silicon", paper given at AIME conference on Preparation and Properties of Electronic liaterials, Prince-ton University, August 25-27 (1975) 5.
Electronic News, September 1, 1975, pages 1 and 24.
6.
Kharchenko, V. A. and Solovev, S.P.
Iz. Abad. Nauk., SSSR 7
No. 12 2137-2141 (1971) Translated by L..Ya, Karpov, Tc,ientific-Research Physiccchemical Institute, (Available from Consultants Bureau, 227 W.
17th St., New York, N.Y.
1011) i 1
7.
Kharachenko, V.A.,
- Spirnor, B.V.,
Solovev, S.P. Fetisova, l
G.A., Vcr:nov,~
I.!!., and Bane, V.E., Ibid. 1 No. 12 2142-45 (1971) 8.
Herrman, H.A. and Herzer, H., J. Electrochem. Soc. 122 No.
11, 1568-9 (1975) j 9.
Kern, W. and Puotinen, D. A., RCA Review June, 1970, pp 137-264.
]
10.
Nozaki, T. Kawashis.;a, T. Eaha, H and Araki, H.,
Bull. Chem, j
Soc. Japan 33, 1428-30 (1960).
11.
Schn611er, M. IEEE Transactions on Electronic Devices 21, 313 (1974).
12.
Rosenblum, C., Benzing, H.C., Denkewal ter, R.G. ; West German Patent 1, 214, 789. April 21, 1966.
-13.
Lark-Horovitz, K.,
and Siegel, S. U.S.
Patent Applications Serial No. 64,034, filed December 7,1948, published June 10, 1952 i
b.
_22 14.
PERS0!C!EL NiD TRA1:l!!!G A.
Individuals who are presently expected to be involved in the manu-facturing operations involving irradiated silicon and/or the radia-tion protection program are listed along with their educational back-grounds and pertinent experience.
In addition, all of *;hese indivi-duals have received the training described in (B) below.
Rich P. Virtue, Process Engineer, B.S.M.E.1968, University of Missouri at Rolla, Rolla, Missouri will have initial responsibility for manufacturing operations.
Forrest V. Williams, Quality Assurance Manager, B.S. (Chemistry) 1946, Berea College; M.S. (Chemistry) University of Kentucky, 1949.
Ph. D. (Physical Chemistry) florthwestern University, 1953.
Formal I
courses included section on radioactivity in undergradual physical chemistry and a course in Atomic Physics at the University of Kentucky.
Richard Mas _sey_, Research Technician, a high school graduate, has spent approximately six weeks measuring radioactivity associated with irradiated silicon at the Technology Planning and Evaluation Department, Applied Sciences, Laboratory at 800 N. Lindbergh, i
St. Louis, Mo. under the direction of Mr. Donald B. Hines, radiation I
officer at that facility.
Bobbie D. Stone, Engineering Fellow, B.S. (Chemistry) Southern Illinois University,1949; Ph. D. (Inorganic Chemistry) Northwestern j
University,1952.
USAEC Pre-Doctoral Fellow 1950-52.
Formal courses included two quarters of Atomic and fluclear Physics at Northwestern University.
In addition, Dr. Stone was employed from August 1952 to November 1953 at Mound Laboratory, Miamisburg, Ohio operated by Monsanto Co. for the US Atomic Energy Commission.
His experience there ir,cluded shout 4 m::nths' 'iork uitn milligram quan-ities of Actinium - 227.
Elmer W. Schramm, Safety Supervisor, B.S. (Marketing) St. Louis University, 1955. He is responsible for the compliance of all operations at the St. Peters site with all Monsanto and govern-mental safety regulations, including those prescribed by OSHA.
a...-
B.
SPECIFIC TRAINIflG 0F PEF.S0!iMEL All individuals listed in (A) above have completed a 3-day radiation training seminar conducted at Monsanto Research Corpora-tion Engineered Products Section (MRC-EP) facility at 1515 Nicholas Road, Dayton, Ohio.
This section is engaged in the manufacture of neutron sources.
The seminar was directed by Mr. Steve Hoadley, Health Physicist at MRC-EP.
The subject matter of the seminar is outlined below.
I
4
-?i-C.
RADIATION SAFETY TRAINING SEMINAR j
I e
1 I.
INTD00:1CTIC" - : tlir.a of uc'ivities o
of radiation safety seminar
- introduction to MRC personnel
- tour of MRC plant II.
HEALTH PHYSICS l
A.
Basic Radioactivity - n,y,8,a B.
Units of "cesurerents 1.
Go.ceci Cefinitions -
RAD, Rem, mrem, etc.
2.
Application of above to trace quantities of isotcpes C.
Personnel Safety 1.
Biological effects of radiation 2.
Rtdictica Damage licits 3.
Regulatory requirements & why D.
Source Hardling & Storage 1.
General Infor,mation - Time -
Distance - Shielding 2.
Stcrage - lo:'sd containers -
5::cci: crcas, etc.
E.
Shipping 1.
Brief summary of shipping require-ments, transport index, etc.
2.
Specific reg,ulations snd practice pertaining to trace quantities i
of reactor induced isotopes
]
O
F.
- h:sur; ment of Re:dioactivity 1.
Types of Cavices 2.
Dose Detection Devices a) Dosimeters b) Film Badges c) Correlate use of devices to personnel safety G.
Deconta:aination Techniques 1.
Solvents / Detergents 2.
Cleaning Techniques 3.
Handling of Wastes H.
State & flational Regulations 1.
Agreement States 2.
flRC 3.
Where to locate Regulations &
Information available in Regulations.
III.
REACTOR II.DUCED RADI0IS0 TOPES A.
Theory - general 1.
fleutron irradiation 2.
By-Products B.
Application in Silicon Industry IV.
FORMAL TOUR OF MRC-EP FACILITIES A.
Demor.stration of E " :t Etrilir: &
Safety Levices B.
Radiation Safety Laboratory 71279
i l_* :
15.
SPECIFIC FACILITIES FOR 1RRADIATED SILICON A specific room will be set aside at the St. Peters plant for receiving all packages of irradiated silicon returning from the reactor facility.
All packages will be opened.in this room and the packages and contents checked for radioactivity. An individual i-trained in the measurement of radioactivity will be responsible for
.this operation as well as scheduling the material for subsequent i
shaping operations. After such operations, the inventory of finished
. products of the irradiated material will be stored either in this 4
i room or another one set aside for this purpose and under the control 3
of the same individual.
i It is not anticipated that special shielding precautions or handling devices will'be necessary since only exempt concentrations and quantities of radioactivity will be involved.
1
16.
RADIATION PROTECTION PROSPJJi Specific activities that will be performed routinely to protect personnel from exposure to dangerous radiation levels are:
1.
Monitoring of all incoming and outgoing shipments of irradiated r.aterial with appropriate d W etion equi, ent.
2.
Radiation badge monitoring of the exposure of individuals involved in the activities in (1).
3.
Routine monitoring of the atmosphere surrounding grinding, slicing and lapping equipment by standard air sampling techniques and sub-
~
sequent counting of the filter elements from the air samples.
4.
Routine sampling of the water effluent from the plant processing stream by standard techniques, l
1 4
60891
_ _ _ - _ _. 17.
WASTE DISPOSAL The St. Peters Plant uses the best practical control technology currently available to prevent the release of pollutants into the environment.
The treatment results in a liquid stream containing no more than 15 parts per million non-volatile solids and solid sludge that is trucked to a landfill where it is buried promptly.
Analysis of the solid si vlge sl.c.s it to be no r.cre than 2% silicon, and hence any solids resulting from sawing, lapping or grinding operations are i
diluted at least 50 fold by other solid wastes.
Both the liquid and solid waste streams will be monitored routinely for radioactivity, i
but no significant level is expected due to the extremely low initial level and dilution in the waste disposal process.
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PORM A E C-T85 u.s.ATourcINER6vCOMMiW 0" 5. INDUSTRI A! BYPRODUCT
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tDNSANIO COMMERCIAL PP.0 DUCTS COMPANY License No. 24-16931 02E.
l Pursuant to the Atomic Energy Act of 1954, as amended; the Energy Reorganization' Act of 1974 (Public ' Law 93-438) 10 CFR Part 30, " Rules of General Applicability to Licensing of Byproduct Material"; Section 32.11, 10 CFR Part 32, " Specifier Licenses to Manufacture, Distribute, or Inport Certain Items Containing Byproduct Material";
application dated February 23, 1976 and enclosures thereto from the licensee; a license is hereby issued to Monsanto Commercial Products Company, 800 North Lindbergh Boulevard, St. Louis, Missouri 63166, to distribute licensed material with atomic numbers from 3 through 83 to persons exeapt from requirement for license pursuant to Section 30.14, 10 CFR Part 30.
This license shall be deemed to contain the conditions specified in Section 183 of the Atomic Energy Act of 1954, as amended, and other applicable rules, regulations, and orders of the Nuclear Regulatory Commission now or hereafter l
in effect.
This license shall expire on April 30, 1981.
FOR THE NUCLEAR REGULATORY COMKISSION ORIGINAI SIU" M liELVIN W SIIIIPE Radioisotopes Licensing Branch Division of Fuel Cycle and APR 2 91976 Material safety Date
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FOR NONMUMAN U$C ONLY POSSESSION OF T HE MA T E RI A L 11 AUT HOR t2 E D IN ONE OF T HE FOL LOWIN G ARE A$ t
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License No.
-E Pursuant to the Atomic Energy Act of 1954, as amended; the Energy Reorgani-zation Act of 1974 (Public Law 93-438) 10 CFR Part 30, " Rules of General ApplicabilitytoLicensingofByproductMaterial";Section32.d,10CFR 2
Part 32, " Specific Licenses to Manufacture, Distribute, or Import Certain items Containing Byproduct Material"; application dated Tbrec3 F17(;
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htters ut i
_ x and enclosures thereto from the licensce; a license is hereby issued to Mch5a Uc munM<v kv<
N*-Om h o b edL L Mbed be Otva c b S[ lo uis, MfCo y J 4,0iG 5 l
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to distribute
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personsexemptfromrequirementforlicensepursuanttoSection[_Oy l-10CFRParth.
This license shall be deemed to contain the conditions specified in Section 183 of the Atomic Energy Act of 1954, as amended, and other applicable rules, regulations, and orders of the Nuclear Regulatory Commission now or hereafter in effect.
This license shall expire on b i 3 0 _ }9 b q
/
FOR THE NUCLEAR REGULATORY COMMISSION l
s Radioisotopes Licensing Branch Division of Fuel Cycle and Material Safety Date
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