ML20083R910
| ML20083R910 | |
| Person / Time | |
|---|---|
| Site: | Nine Mile Point, Perry  |
| Issue date: | 04/26/1995 |
| From: | AFFILIATION NOT ASSIGNED |
| To: | NRC |
| References | |
| REF-PT21-95 28585, CEI-9502-01, CEI-9502-1, NIMO-9502-01, NIMO-9502-1, NUDOCS 9505300195 | |
| Download: ML20083R910 (18) | |
Text
-
APR 26 '95 10:00 INTEGRATED _ RESOURCE 402.873 5859 .P 2/18-4 i
INTEGR ATED RESOURCES. INCORPOR ATED ]
TECHNICAL REPORT COVER SHEET IRI PROJECT NUMBER: CEI-9502 AND NTMO-9502 i
CLIENT PROJECT NUMBER: S 137501 AND 95 06135 CLIENT: CT EVELAND ELECTRIC TT.UMINATING AND NIAGAR A MOHAWK POWER CORPORATION PROJECT TITLE: G. R. MODEL 169CR805P002 POWER SUPPLY REFURBISHMENT AND S AT.E. l DOCUMENT TITLE: EVALUATTON AND ANAT,YSIS OF G. E. MODEL 169CA805P002/KEPCO. INC.. RMX 24-D-20R04 POWER SUPPLIES 4 I DOCUMENT TOTAL PAGES (EXCLUDING COVER SHEET): fL TECHNICAL REPORT NUMBER: CET-9502-01/NIMO-9502-01 REVISION: _L ORIGINATOR: 4 I[hd DATE: V/#Mff l
i N ONkto PDR
RPR 26 '95 19:01 INTEGRATED _ RESOURCE 402.873 5859 P.3/18 IRI JOD NO CFI-9502/NIMO-0503 REPORT NO. CEl-9502 01 & NIMO-9503-01 PAGE .1 oF g EXECUTIVE
SUMMARY
This report provides final recommendations and the pertinent data obtained during testing and evaluations for the refurbishment and repair of KEPCO, Inc. Model RMX 24-D-20804 Power Supplies.
Integrated Resources, Inc., (IRI) observed that " SAFETY RELATED" power supplies provided by two customers for refurbishment had failed in exactly the same manner. During discussions with KEPCO, Inc., the original equipment manufacturer, IRI was advised that transistors Q15 and Q16 were " marginal" Based on KEPCO's analysis IRI reported a possible design deficiency as required by IRI's QA Program and 10 CFR 21 to the U. S. Nuclear Regulatory ;
commission verbally on 3/24/95 and in writing on 3/27/95. i Since the notifications Integrated Resources, Inc., has selected a replacement transistor XSIS 095 and thoroughly tested the Kepco,Inc., Model RMX 24 D-20804 power supplies with the replacement transistors installed. Integrated Resources,Inc., believes that replacement of Q15 and Q16 with XSIS-095 when coupled with replacement of the aluminum electrolytic capacitors provides a long term solution to the original problems associated with these power supplies.
Integrated Resources,Inc., with Kepco,Inc.'s concurrence recommends that transistors Ql5 and Ql6 be replaced with XSIS-095 and that all age related aluminum electrolytic capacitors be replaced on all Kepco, Inc., RMX 24-D-20804 power supplies which are retumed ihr refurbishment. l Integrated Resources, Inc., additionally recommends that each individual nuclear facility with KEPCO, Inc., RMX 24-D 20804 power supplies installed evaluate the systems and usage of the power supplies and based on the power supplies criticality to the systems operability determine whether the individual power supplies should be refurbished.
REVISION NO 1 ORIGINATOR's INITIALS A DATE: 4/26/95
I APR 26 '95 10:01 INTEGRATED RESOURCE 402 873 5859 P,4/lg l
l l
IRI JOB NO. cf"14'>02/NIMO-9503 REPORT NO. CEl-9502 01 & NIMo-9603 Ot PAGE 2 OF A i
l INTRODUCTION l i
Integrated Resources, Inc., (IRI) observed that two different customers had sent us power supplies in which Q15 and/or Q16 had failed open and R1 (soft start bypass resistor) was open. j One unit from Niagara Mohawk Power Corporation, Nine Mile Point Unit 2, and 3 units from !
l Cleveland Electric Illuminating, Perry Nuclear Power Plant. Subsequently, during AS FOUND testing 3 PerTy units failed in exactly the same manner. This led to an order being placed to )
KEPCO, Inc. for replacement transistors. The replacement transistors supplied by Kepco, Inc.
were 2SD380's rather than the 2SC2507 transistors spwilled by the parts list, and therefore, were rejected during receipt inspection. IRI contacted Kepco, lac. believing that Kepco had supplied these transistors as substitutes for an obsolete device. IRI requested that Kepco, Inc., supply IRI with the su'ostitute transistor information and the information on the power supply circuit analysis which would allow IRI to dedicate the replacement parts. Kepco, Inc. called back indicating that their preliminary analysis indicated that the transistors could see 428 V and 3.5 A maximum in the power supply circuitry.
At this point IRI pointed out that the transistors were 400 V devices. and that it was possible that the output transistors were being operated at voltages above their design specification. Kepco, Inc., indicated that their had been some problems with these transistors and their replacements all of the way back to the power supply production period. IRI explained that the power supplies )
were used in some " SAFETY RELATED" applications at nuclear power plants and that if the !
preiiminary analysis were proven correct that we must issue a 10 CFR 21 notification for the defective part(s). The Kepco,Inc. engineer requested 24 hours2.777778e-4 days <br />0.00667 hours <br />3.968254e-5 weeks <br />9.132e-6 months <br /> to allow further analyses and a complete review of his calculations.
[
The following day, the engineer called and indicated that his preliminary investigations were proven correct by his Chief Engineer and that the notification was required.
It was later discovered that there was a typographical error in the RMX 24-D 20804 Technical Manual, which caused IRI to order Kepco, Inc., pan number 519-0036 (2SD380) rather than the 519 0037 (2SC2507).
EVALUATION AND ANALYSIS Since issuing the 10 CFR 21 Notification, on 3/27/95 Integrated Resources, Inc. with immense amounts of technical assistance and analyses from Kepco. Inc. has analyzed the Kepco,Inc.
RMX 24 D-20804 power supply with the following results:
REVISION NO.1 ORIGINATOR'S INITIALS d DATC. 4/7 Ar96 1
I APR 26 '95 10:02. INTEGRATED RESOURCE 402_873 5859 P.5/18 1 l
l f IRIJOB NO CFl-9602/NIMO-9503 REPORT NO. CEl-9502 01 & NIMO.9603-01 PAGE2OF&
- l. Transistors Q15 and Q16 were initially specified to be T20M40 manufactured by Shindengen.
We can find no reference for a standard part number T20M40, however, a T20M40F3 was manufactured by Shindengen. nis transistor had the following specifications:
Ic = DC Collector CurTent, Rated Maximum == 20 A.
V<umceo - Breakdown Voltage, Collector to-Emitter with Base Open = 400 V.
hrs - Static Forward Current Transfer Ratio, Common-Emitter = 10 Minimum Po = Power Dissipation, Rated Maximum = 200 W.
Package Style = TO-204 l
- 2. According to Kepco, Inc., records when T20M40 transistors were taken out of l production, TDK specified a substitute transistor manufactured by Shindengen, a l 2SC2507. This transistor has the following specifications: ;
le - DC Collector Current, Rated Maximum = 20 A.
V<3x3cto = Breakdown Voltage, Collector-to-Emitter with Base Open - 400 V.
hrt - Static Fonvard Current Transfer Ratio, Common-Emitter = 15 Minimum,20 f
Maximum Po = Power Dissipation, Rated Maximum - 200 W.
Package Style = TO-3
- 3. According to Kepco. Inc., records when the 2SC2507 transistors were taken out of production, TDK specified a substitute transistor,2SC2930-06 manufactured by Fuji '
Electric Co., Ltd. The specifications for the generic 2SC2930 transistor are as follows:
Ic = DC Collector Current, Rated Maximum = 30 A. l V gau)cto = Breakdown Voltage, Collector-to-Emitter with Base Open - 400 v. )
hre = Static Forward Current Transfer Ratio, Common. Emitter - 15 Minimum ,
Pn - Power Dissipation, Rated Maximum - 200 W. l Package Style - TO-3 l l
l REVISION NO 1 ORIGINATOR'S INITIALS (( DATE: 4/26/95
RPR 26 '95 10:02 INTEGRATED _ RESOURCE 402_873 5859 P.6/18 IRI JOD No. CEl-9502/NIMO-9503 REPORT NO, eDM02-01 & NIMO-9503-01 PAGE f OFS Transistor 2SC2930-06 specifications are as follows:
Ic - DC Collector Current, Rated Maximum = 20 A.
V(sa,cso = Breakdown Voltage, Collector to Emitter with Base Open = 400 V.
hre = Static Forward Current Transfer Ratio, Common-Emitter = 22 Minimum Po = Power Dissipation, Rnted Maximum = 200 W.
Package Style - TO-3 As can be seen during the entire production period of this power supply Q15 and Q16 have been specified with transistors which have a V(nx>cro (Breakdown Voltage, Collector-to-Emitter with Base Open) of 400 V. Kepco, Inc. has calculated that these transistors as used in this application ,
can see voltages as high as 428 V. Thus during the entire production period the power supplies were produced using " marginal" output transistors, Q15 and Q16.
i It is also believed that these problems are compounded as capacitors C4, C5, C6, C7, C8 and C9 age. These capacitors are aluminum electrolytic capacitors which have a shelf /useful life.
Aluminum electrolytic capacitors age during storage and/or operation. The aging effect is caused j by the gradual loss of the capacitor's electrolyte by vapor transmission through the end seal. The l expected shelf /useful life of the capacitor is directly dependent on the loss of electrolyte, which is l
dependent on the composition of the electrolyte, the effectiveness of the end scal, and the operating and or storage temperatures.
The effect of the loss of electrolyte initially has little effect on the electrical performance of the l J
capacitors. However, after about 40% of the electrolyte is lost, the Equivalent Series Resistance (ESR) increases rapidly, capacitance decreases and ultimately the capacitors appear open.
Since the capacitors are installed in different areas of the power supply and therefore, operate under slightly different operating temperatures and since the capacitors themselves tend to " age" at slightly different rates, the true operating voltages impressed across Q15 and/or Q16 over the life of the power supply will vary. If the capacitors age at different rates and the capacitors contiol the voltage across Q15 and Ql6, then the voltage across Q15 and Q16 vary in accordance with the rate of aging of the capacitors. If the capacitors continue to age differentially it is possible that the voltage across one of the transistors will increase to the point of failure of an already marginal transistor, l
l REVIStoN No.1 ORIGINATOR'S INITIALS /d DATE fqf!2f.
i
APR 26 '95 10:03 INTEGRATED _ RESOURCE 432_873 5859 P.7/18 l 148.'08 NO. CEl-9502/NIMO.9}Q1 REPORT NO._CEl-9502-01 & NIMO.9503 01 PAGE 1 OF A In order to correct the " marginal" transistor problem, Integrated Resources, Inc., selected two different transistors with as similar as possible specifications but with a V<angroa 500 V.as pos,sible candidates for replacement of Q15 and Q16. These transistors bear IRI part numbers XSIS-094 and XSIS 095. The transistor specifications are as follows:
XSIS-094 Ic = DC Collector Current, Rated Maximum - 20 A.
V gano = Breakdown Voltage, Collector-to Emitter with Base Open - 500 V.
h>g = Static Forward Current Transfer Ratio, Common-Emitter = 15 Minimum,75 Maximum Po = Power Dissipation, Rated Maximum - 175 W.
Package Style = TO-3 XSIS-095 Ic = DC Collector Current, Rated Maximum - 20 A.
V,aun = Breakdown Voltage. Collector-to-Emitter with Base Open = 500 V. ;
hrt = Static Forward Current Transfer Ratio, Common Emitter = 40 Minimum Po = Power Dissipation, Rated Maximum - 175 W.
Package Style = TO-3 TESTING Integrated Resources, Inc., refurbished two power supplies replacing all aluminum electrolytic capacitors and placed XSIS-094 output transistors in one power supply and XSIS-095 output transistors in the second supply. Both units were placed into burn in and the testing commenced.
During the initial phase of the bum in test the units were set for a constant voltage output of 26.4 VDC (100% rated) and cycled through the entire range of output amperage. Temperature of 9 points on the heat sink and both output transistor temperatures were measured at 2,5,12 and 15 Amp outputs. All temperatures taken during this test are conservative since all 4 side panels of the power supply were removed, which results in all heat generated by the components mounted ,
to the heat sink having only the heat sink available for heat rejection. During the temperature measurements ambient room temperature was 22.1 *C.
REVISION NO 1 ORIGINATOR'S INITLALS /3 OATE:4W95
, AFH 26 '95 10:04 INTEGRATED _ RESOURCE 402_873 5859 P.8/18 IRI JOB NO. CD-9502'NIMO-9603 REPORT No. CrI-9502 01 & NNo-050LO1 PAGE 6 OF g POWER SUPPLY WITH XSIS 094 INSTALLED Output Output Voltage Amperage A B C D E F G H I J K VOC A *C C *C *C 'C 'C C 'C *C *C C 26.254 2.0 32.8 32.9 33.5 33.1 33.1 33.1 32.1 32.6 22.8 36.8 37.7 26.325 5.0 36.8 36.8 37.1 37.2 36.9 37.3 : 36.7 36.3 36.1 41.1 40.5 26.230 12.0 50.3 50.2 50.5 49.7 50.0 50.0 48.6 48.0 49.4 68.4 66.1 26.302 15.0 59.3 60.4 63.0 61.5 63.3 63.5 60.6 60.3 61.6 107.3 92.0 POWER SUPPLY WITH XSIS-095 INSTALLED Output Output Vonage Amperage A D C D E F G H I J K vDC A C C C C C C C C C C C 26.427 2.0 32.0 32.0 32.3 31.7 31.9 32.4 32.6 32.8 32.2 32.3 34.6 26 410 5.0 37.0 37.5 36.9 36.8 36.9 37.0 36.6 37.2 36.9 39.0 40.1 26.420 12.0 53.6 53.7 54.6 52,9 53.7 53.9 52.1 52.0 52.7 66.7 69.3 l
26.413 15.0 54.3 57.3 58 5 53 6 57.0 58.1 55.1 52.8 55.2 61.2 56 4 l l
1 As the data shows, the power supply with the XSIS 095 transistors operated cooler temperatures ;
than the unit with the XSIS-094 transistors, especially at the higher load values. Both power supplies operated successfully at 26.4 VDC and 15.0 A. (greater than 80% of rated load of 18.0 A.) for OVer 48 hours5.555556e-4 days <br />0.0133 hours <br />7.936508e-5 weeks <br />1.8264e-5 months <br />. At the end of the 48 hour5.555556e-4 days <br />0.0133 hours <br />7.936508e-5 weeks <br />1.8264e-5 months <br /> period, additional stress testing began.
The stress testing included increasing the load applied to cach power supply in 1.0 A increments allowing the power supply temperatures to stabilize and recording the heat sink and output transistor temperatures as before. ,
TEMPERATURE MEASUREMENTS AT 16 AMP LOAD.
POWER SUPPLY WITH XSis 094 INSTALLED AT 16.0 A LOAD Output Output l Voltage Amperagt A B C D E F G H I J K VDC A *C 'C 'C 'C 'C 'C 'C C -C *C C 26.4 16.0 53.8 66.2 57.2 55.5 49.1 53 6 51.3 55.8 58 4 81.2 79.2 1
REVISION NO.1 ORIGINATOR'S INITIALS /f DATE: 4/26/95
l
, RPR 26 '95 10 04 INTEGRATED _ RESOURCE 402_873 5859 P.9/18 j l
l IRI JOB NO. CEl-9502/NW9-95Q2 REPORT NO. CFI-9602-01 & NIMO-9503-01 PAGEZ OF3 .
1 I
i POWER SUPPLY WITH XS!S 095 INSTALLED AT 16.0 A LOAD Output Output Voltage Amperage A B C D E F G H I J K VOC A *C *C *C 'C 'C 'C *C 'C *C C 'C 26.4 16.0 58.5 59.5 60 0 58.6 58 3 60.4 57.6 57.3 56.8 79.5 77.4 TEMPERATURE MEASUREMENTS AT 17 AMP LOAD. 1 i
l POVER SUPPLY WITH XSIS-094 INSTALLEO AT 17.0 A LOAO l Output Output Voltage Amperage A B C D E F G H I J K ;
VOC A *C *C *C *C C 'C *C 'C 'C C C 64.5 108.8 95.3 26 4 17.0 63.3 63.5 67.7 63.3 64.6 63 5 61.7 63.3 )
POWER SUPPLY WITH XSIS-095 INSTALLED AT 17.0 A LOAD 1 l
Output Output Voltage Amperage A B C D E F G H I J K VDC A -C 'C *C *C C 'C *C 'C C C *C 26.4 17.0 64.6 65 9 69.4 63.5 65.8 66.9 64.0 66.0 65.0 101.5 98 5 '
1 At approximately 17.5 Amps the power supply with XSIS 094 transistors failed. The failure was consistent with other failures observed, Q15, Q16 and R1 had all failed open. Stress testing l continued on the power supply with XSIS-095 installed. Final testing for the unit was at 26.4 VDC and 19.0 A. the following temperatures were recorded:
POWER SUPPLY WITH XSIS-095 INSTALLED AT 19.0 A LOAD )
J 1
Output Output l Voltage Ampetage A B C D E 'F G H I J K !
VDC A *C *C *C C *C *C 'C 'C *C *C 'C 26 4 19.0 76.7 81.5 84 6 76.6 81.5 85.5 75.7 72.4 78.9 130.6 127.3 1RI believes that the excessive heat observed for the unit with XSIS-094 is due to insufficient i drive available coupled with the low gain hu of the transistor, as was predicted by preliminary l
testing and Kepco, Inc., analyses.
1 i
l REVISION NO.1 ORIGINATOR'S INITIALS d_ DAT8E. 4/76/95 l
, RPR 26 '95 10:05 INTEGRATED RESOURCE 402_873 5859 P.10/18 IRI job NO.&El-9s02/NIMO-9503 REPORT No. erl-9502-01 & NIMO-960341 PAGE g OFg RECOMMENDATIONS Integrated Resources, Inc., with Kepco, Inc.'s concurrence recommends that transistors Q15 and QI6 be replaced with XSIS-095 and that all age related aluminum electrolytic capacitors be replaced on all Kepco,Inc., RMX 24 D-20804 power supplies which are returned for refurbishment.
I Integrated Resources,Inc., recommends that each individual aclear facility with KEPCO,Inc.,
power supplies installed evaluate the systems and usage of the power supplies and based on the power supplies criticality to the systems operability determine whether the individual power !
supplies should be refurbished.
CONCLUSION Integrated Resources, Inc., (IRI) observed that " SAFETY RELATED" powe. supplies provided by two customers for refurbishment had failed in exactly the same manner. During discussions with KEPCO, Inc., the original equipment manufacturer, IRI was advised that transistors Qi5 and Q16 were " marginal". Based on KEPCO's analysis IRI reported a possible design deficiency as required by IRI's QA Program and 10 CFR 21 to the U. S. Nuclear Regulatory Commission verbally on 3/24/95 and in writing on 3/27/95.
Since the notifications Integrated Resources, Inc., has selected a replacement transistor XSIS-095 and thoroughly tested the Kepco,Inc., Model RMX 24-D 20804 power supplies with the replacement transistors installed. Integrated Resources,Inc., believes that replacement of Ql5 and Q16 with XSIS-095 when coupled with replacement of the aluminum electrolytic capacitors )
provides a long term solution to the original problems associated with these power supplies. l REFERENCES
- 1. Fax of memo dated 3/24/95 from Mr. J. Kiviranna, KEPCO, Inc., Senior Applications Engineer, to Integrated Resources,Inc., concerning voltage ratings of Q15 and Q16.
- 2. Fax of memo dated 4/6/95 from Mr. J. Kiviranna, KEPCO,Inc., Senior Applications Engineer, to Integrated Resources,Inc., concerning review ofIRI testing.
- 3. Fax of Shindengen T20M40 and 2SC2507 transistor data sheet from Data Digest.
- 4. Fax of Fuji Electric Co., Ltd. data sheets for 2SC2930 and 2SC2930-06 transistors from Collmer Semiconductor.
REVISION NO.1 ORIGINATOR'S INITIALS /6 DATE;UN H
APR 26 '95 10:05 INTEGRATED _ RESOURCE 402 873 5859 P.11/18 e
l l
i l
l l
REFERENCES 1
l l
l l
I I
03/N76.,26 35,},0QIyKG,RHgDfEjj,0URCE 402_P,3,,58'j9C f P.1g(Jf1/001. . ~ t . .. _ r. _ p KEPCO, INC., NEW YORK pg Company Integr5ted Resovrees, Corp. Name Ahn Br mm Name John Kiviranna MEMO T , O , :. CC Satkis Narci:ss:lan M Fax No. 718 767 1102 No. (1/11 Fax No. (402)(di3 5809 Tel. No. 718 461-7000 q Date 03/24/95 __
. , .s.
Attention: John Brosemer g,7
. 1:
Re: Our tetaphone conversations of 2 nd 24 March,1995 2 '
Subject:
Main power switchin0 tran' _ rs for model RMX 24 D 20804 5 it has recentiy come to my attentforp at there have boon random failure of the power switching transistors in the RMX 24-D-20804. h' in discussing this mater with Sarkis $4sessian, our Chief Electronics Engineer, it has been cor.cluded that the voltage rating of transistors als & Qj B',are marginal.The calculated voltage straus inay reach 428 Vdc at nigh lino. The calculated current stress mbf-teach 3.6 Adc at low line.
$h The calculations are based upon the qtp,pter on Half-Bridge and Full Bridge Converters in SWITCHING POWFR StJPPLY DFStGN, published by McG/a .-Hill.
( c. We therefore recommend that you tris jute a policy of replacing all the non 2SD380 transistors at the earliest possible opportunity. 'i f); . ig: The voltage ratings of capacitors C d C9 entirety adequate for the task. S e. ragt.rda w{k l d .~>. . John Kiviranna Mj; Senior Applications Engineer fy
- 0 yi
- I ;
kb
..g. .
. 4. '
-; V.;
N@ w
$C
. ?*?
? ',
CC Frrak Tolers jK . 3.
-c %.
e *N. ,
'i : .
l {.
'. ll
?6 .. .- - _ .
04 / OiAPR 26 '95 10: 06 INTEGRATED RESOURCE 402_873 5SSI P. l'3/18 < 001 C mpany truegramd Resouras, Corp. KEPCO, INC. NEW YORK F FAX Name John Kiviranna MEMO T Name John Brosemer O O CC Sarkis Nerce:;sian M Fax No. 718 767 1102 N3. (1/1) Data 04/06/95 Fax No. (402) 873 5809 _. Tel. No. 718 4617000 Attention: John Drosemar
Subject:
RMX 24020804 We have reviewed the results et your f ax dated 4 April 1905. We concur that the XSIS 096 m are well suited to this task. , l 1 l Best regards, K ~ m. e O y
, APR 26 '95 10:06 INTEGRATED _ RESOURCE 402_8'73 5859 P.14/18
_ i y7.n,)mo>a13-V r u n~. .. , o... w MGM i
, 4 i. va r vri-u.) m) i. >
m- .ynu-/ !"T"1 m m w .m w) s) l oign too e. he - Y'ma trw V' f.i*=.1 '*4**) 'a *J, pur,43 g .8 Y 25 8.9 le I
'N N N W
- ~'
-o,n w e.n _ ne s 591C 2_ **
xe arxce soo u _sp.o9__. 8 S, W " 18 '8 sm , s.: ,$oo_ w u - a ".__ i
$6xor*i "" '
'8 '"
.' stab roo u em su.. a 1a im 50 se i i,'.a, , ,,r f 9 (2 / K s2:.7 '( 9 f')i m -
-$*$ -- 'Os izo i.3 a " u "'#'"'#'""'"""""""'
m,,n - w .., ..
. ,, .. .. . < . -> x.,
a8 su w m w m M _. .M e t>$971 N1 'O("IMI xivs ,,
, o-w i
- m en - no
- kivs *~ _.6L'.6L mea w mis et n . .Y.-J i.. 5 '5 WM too u
" I5ii'~' 5
- 8(IYl' I E I0d ~ I II 1
y 2 i .t ,- m ,- 5 ma a, , us-its ,,, , moecn em "'V
- 3'5"
ns gi -- t* l{ - w .C$ . m 1 g7; m--l , .
.a m
a u ,, a y-'
, z. .msum
.e .e - a. ,
m + , n=mt '
.w _ .
_ _ . . _ . L ..
/ T7-* b%M9 POWER TRANSISTOR *Climat
- shew stehid v -.
' en
$4 Af?%'/ FI ser.os Hyt. Sp r e Tr.m.3..t.w s 1 Ely g g g,y g YGD0 VCEO 00 . Pr ' l# E ,' y " % ~
M m m. ,w- m .s. . - l' atA s' I
.g n j T3y40F 4 t$06)I 3 44 ,
revior e it.orse --6 - 5. - ri { g
= - :. u..
Tus w. imw . .. - q$ _ 2 1 NOW40 I fSC2918 40 _l p I g e.
% g raawi at2 E r soa ao a o n i e. , - '
D 36aJ MF 4 if.C4546 6 40 21 !!"s7." u4 f' . r . swue . 4,a 9 T a .n . .. E24 E g T 4 ShT40VI
, TFM esf I 2 f.C2263
#8Vir%01 10 '
70 i04 pre g, p[ b% +3 M Ai ? Y'./7 F7 beareas:;, High Spnost Trverr, tars -j . 3 - h T. _TUV 4C9 2 2842826 ) _3 de 34A.,, , b' he-
. Tsv aas. : 36,c3:21 4 se I
r Q T16W4Ft ~M3T g 90 4M 44 600 40 1 2 6.$ Y Ac d
'h ~
O ' E0@l#2 ISO 2i2E l to las ~ Y te*- .4 - TF08J 80F # F3O?t 33 l 20 100 Y .-- i - P
- 4mieuse wn, e,n. - - a :... y ,:, m _ 'g @- -
y n..m . a ,e , Tifw 2W 3 2SC1229 . 60 100 Y 5 ^ i fWoo m ,, escsui m ,1 - - s _,,me. a
!. o o ...
Y n -f'** m ITi e.m. t a s Y
~
Y2WMF3 MCW21 t0 fee . TJ#dm*3 ;503d4 v.on-w iit, sei 3 30s 4 Y - 3
, ' f, f'
'-~ - :
T6VMF3 2303)&$ 6 14 h *"P' . TI?* 4M #3 01164 #t t 04__ T
'~~
T3M W a Ec3166 tot d00 -3 66 10 9.3 1.4 0. t T6M40F3 E336, 'T' 40 E30 T iendMf3 RC,3181 to le ao i t0N605 2603ii[ N . tGB ~$ i~ .i. # M II
- dnaft.X i / 9 > 7 '
Mth Voltregc. Hg. Spocal .,.l 189 W Jb04M - 0 Il k a k' Ok w.o avuir 8 w . va- -
"I w= _
164v6.') mann a tSC3181 u , __ w m) i o u o I -
' t*d,NCE IE0W80 . to Ito __
3 M S R I R # E
- 51
, APR 26 '95 10:07 INTEGRATED. RESOURCE 402.873 5859 P.15/18
. =
I ? J - F 5 > f. A " M P ' POWER TRANSISTORS . i 3 HIND.EN6CN..E.LE. CT..RI. C,,.11F G 3 2E, . 7.. . , m, . 6 2.1."I3 4 7, , 0. 0.,00 03,6.a.,_E5 0 _ue 5 HE_J y
.,w, r . -- u-- , mm w -- ..- -=--v--
-- - .~, I l
. F3 series M I ~i E % aW&*24 4KNpMeet 1 '
AtamAm Wes&mert harge Elmambal f' WM l CA.J Tyse vcao veso vtno b in Pt Tart Tj Yeso 6rt Vos Yee 8p tr ten e if "- (se f.ase M O.h w> u. e kw w w M mo g4 W r =4 m M M M (Al IA3 _{tf} (t} (tl (Vj' '(V) {t/W) (NHaly6] f/rS) b5) !
~
43C3240 76v2cFa 6 t to 2. 5
~
84 t 4220 f108 JtF 3 le 4 80 3 61g, 2 3221 TWif273 M 22) 7 _8 i_ 40 -$6-+ #84 +150 ted le i f.6 f.H is 0. 3 0.5 0.1 3222 TicadacFa' et a ses _FV 1 s.85 FIs. 6
,3423 T20M20F3 E F 200 0.82 Fig. #
3162 Tavecra s ao s.is e $'# 63 Tff 4G's 8 i N g,
- 3. 8
.8184 TioweGra 50 4 see 1. tt F4 3
. sette faute's 500 e 7 3 i so + 158 +t&O 440 is 4 1.5 t. es to e,3 I t. t alte TOM 40rs 6 2 to ,lg sier Tiow*n - . i o. i.ls ,rw s
$ lee]20M40F) _ ,, ; 4 : 7 FM i g , . 532 i e i e r. s, '
) i l
.-em rm. _ _ _ _ _ _ - . , - . _ . - - __... __. ...w-,r - +-rw. ,y b I. M WME.PAPFIMM.F,7v'd 11PfWFilrowiirthlag.5.TTItilinalMsomm MC M 1Mf -
- . - . . . n ._
_ _ , . _ _ y
- FX serios M
~
O g 4 at A A 2: 4
- R S = 8 M to 9 Absm6me Mensma Ra$gs % Gamlud N ,M PJ i Vese Voto Yeoo is Vcto WE VOC VB4 68 ft he to ff l EIA.J Type to Pr Tsq T) (mm) M 06a, ; i H2 Me M M (rn64 (e+@ (M ma) Ve4 km4 4 61) N N (*m4 th
/7tc4(181 ' T3v4w x _M (A) (A) e' (W) to (t) _ ._( t_1 M (v) [V) (t/w) w) pel D a.) Us) : I 3 8.12 FV I f east Tp W 4erx : I e s pg a j4Ce3 TSV40FX 5 8 50 2. 6 _F'g. l' f ooted TPSV4E#'X 5 3 sf 4.16 Fe, 2 T8v40FX $ rio64 a a so W A38 7
, 4 154 t tno ato le L5 1
g.M M 0,5 9.t Ft 4g 4 a I
- g. I',
, .ae Tw4arx i 4 m t.w
.,eans Tsmese is a les '
- f. 25
{p4CM TlW8!#X el & LSA gg O.34 ' s 40f4 T30WeEFX 20 1 15e 8.43 3rto T2Ne:P r km _ 4cc a i at aao s.cs a.3 Fs. to ' Mfj(Il Oudno Dirnonolone m :en) r's. : , ,. ,, Fs. : 79 a 3., ,, rig. s
#M To ' AM'"
g[noch D .-
"I O L'"d g,, p,9 rpas
[ g . . . . :1 - IN i [
++
e, 1 [ Si e pe j i'w
, 0,
.N
- D -
- u - . . ~
& %snyn ,-,e. n u.
, RPRRPR 26 '95 10tOS INTEGRATED _ RESOURCE 402_S73 5859 TO 14028735809 P.16fjp ~~", Ir nsistors '
/
f p: . 9x pa gw5864 S6 RW ,b i
- High speed switching darlington transistors
. Tnese are of darlington type and are provided w:th a higher hrt.
Switching speed is in the range of tv1ps.
. Bast suited to switching regulator and motor control appl l cations Device Veoo Veso ,Vcso ' j ac ,j Pc .hu '. . , k-; Switching time (Mar.) Package Not type w v cenos) .. cont. .. r
'inin. . ie ..- + veu t At.e ' ;t, n- wr weight Equivalent-etreuit i
. Vc4ts,svolts , Volts . Amps. Watts Ampe. ".VNts usec. psec.. psec. :m Grams Page 40 1 j ETG34-040C $00 500 400 20 175 50 to S 0.8 2.5 1.0 T0 3 17 ; Fig. 86 E34.0400 ' 500 500 400 20 175 l 50 to 5 0.8 2.5 1.0 TO4 17 Flo. E9 ~
roote: Tnese we evaifet te in two ve.sions - Le. with buist-la fast recovery d; ode or withowt. Pisase select the version t>tst swited for your ovepose. h Power darlington transistors
. The DC current ga!ri is very high.
_ _ _a Highly versatile Device
. '.N h(."" M"*T jf 7
type ' Vood.'f Veso p(sus ce c iPc'T*,,'rnin."jle rit.M ,5witchind time (Mei). Padkage" Not TEquivalent' T b C , b'*?.tr .h ' h ght circhlt # VoltCYO35*n*=*Jg:
- VO! _Arpos.*Ma:tsL' t'"f _Am ' '
2SO1797 "uu/*nsse?_stW.fC _ _Wf Grams _ Page 40 2, 60 00 50 7 30 800 3 1.s - - lTO.22cF 2.5 Fig. 83 250233 _80, ,, 90 80 7 e0 2000 3 3 1.c s.O 1.0 TO-220A8 2 Fig. 8 4
- 2S 0016 80 60 80 7 40 1 1000 3 15 1.0 5.0 1.0 TO 220A0 2 i Fig. 84
- 2$01726 i50 100 80 7 25 l 400 5 2S0034 2 2.0 15 2.0 To-220F 2.5 l Fig. 03 ~
,,,250 j oo 180 4 75 l 15no ? 1.7 1c 10 i TO-220AB 2 i Fig 82 i HD,1f 13 . SI)0 250 2sa a .t . in00__2,2_ 2
\
3_ 15 10 l TO-220Ae 2 i Fig. 01
? SOT 7 ' 2c; 300- 300 r, o t,00 ) 2S0107 I ~~450 450 300 6 40 500 4
4 2 2 3 1s
' TO-220# 2.5 i F;g. 86
_2$0835 to i TO-220AB 2 ( Fig. B8 400 400 35n s 40 400 4 1.5 1.0 2501072 12.0 6.0 TO-220A8 2 l Fio. 84
- 500 500 350 5 60 l 500 3 1.5
__ E T366 1.5 12.0 6.0 TO 220AB 2 I Fig._53 ~ 60 _ GO 50 7 40 l 4000 3 3 - -. - l TO-220F 2.5 l Fic. 64
- _ET373 100 ET270 100 100 10 80 l 1000 e_ 2 - - -
l TO.3P 6 l Fig. 84
- 100 100 100 15 100 i 1000 8 3 - - -
I TO 3P 8 l-ET293 150 ET384 100 100 10 80 1 700 3 4 - - - 170 395 6 IFig.81 300 250 250 4 40 l 1000 2 2 ET365 450 1 -- - - lTO-220F 2.5 i Fig. 81 460 300 s 40 } 500 a 2 ET385 400 i TO-220F 2.5 i Fig. 88 400 350 a 40 400 4 1.5 ET375
! 1.0 12 0 s.0 lTO 220F 2.5 i Fig. 84
- 650 450 4s0 15 80 1 100 15 5 1.0 12.0 2.0 i TO 3P* 6 t Fig. 87 *
- withour 60 tortnimal h Lar'ge current speed switching transistors
** Efficsent The le can handle parallel large current (30 Arnps) yet the switching speed is very high.
operation __* Motor speed controls, inverter and chopper use i Oevice D V<ao Vcno ' V uo le Pc tw Swetching time (Max.) I (sus) cont, min. . k Ver b tp Package Net Vo!ts . V0tts Vorts Amps. Watts tm. weleht Amps. " Vetts pse:,. psoc. psec. 0 650 Grams 400 400 30 200 15 to 5 1.0 3.0 1.0 ' TO,3 19
y 14028735809 P.17(j,8 #
, R 26 '95 10:09 INI(GRAIE RE50l,lRCG,gg M 3.5859 TO
( . .. and. Charactoristics' of Fall Power Transis tor l
- - . - . . _ _ . . . . . ,2'S C 2'S S O - O G '*
i I
- 1. Outlino Drawin'ss ':
- See Next Page .
- 2. Absolute Maximum Ratinas (Tc=25t)
Rating Unit l Symbol Item Collector-Base ' Voltage ,
VJie 500 V 400 y Collector-Emitter Voltage Ver. _ 400 V Collector-Emitter Voltage Vcseuvu 10 V Emitter-Base Voltase vs.. Ic 20 A l Collceter current l 1: 8 A BassCurrent , Colfster Disspatico Pc 200 W ti +150 t ; 3 OperatinaTemperature
-65 ~ +1S0 t fj . Storage Temperature Ists j 3. Electricaf Characteristics (Ic=25%)..
i 1 i . Item Symbol Conditiona , Hin Max , Unit
$l yu lei. V
- v. ImA 500
[t Collector-Bano Voltase e .
} g !;i Collector Emitter Voltage Vcco . leno 10d 400 V 1 Ie j h Collector-Emitter Voltage Vcio em 'Ic 1A 400 V Emitter Base Voltage Vsi. lei. Id 10 V 1.0 mA m C.:n ntor Cut-off Curror.t j ien {Venc=500V 2 In- V: e - 10V 1.0 mA Esitter Cut-off Current bei Ic 10A Vez=5V 22 DC Current Gain Collector Saturation Voltage Vertsau Ie 20A . 1.0 V h, _
' Saturation Voltage Vs tiin In = 4A 1.25 V 7o 2mitter .
Id ton le = 20A Rt. - lon 1.0 ps q J* - 1.i. 4A Fw = 20us Switching Time ts tg 1, . 44 '3.0 ps Duty = 2% 1.0 . ss
/ if l yh r
M , {% N DATE NAME APPROVE Full Electric Co.,Ltd. Jd ' DWN 61 -// - 6 ' M. Sc. ,d E5B010 % d e v. p - <m - >< - 9 i'.y.; 1 l
~~
. APFrAt 2G'.795 10f09 INTEGRATED _ RESOURCE 402 873 5859 TO 14028735809 P.1,8/JG I
'. Item -
[ Symbol Conditions Min Max Unit - Thermal Realstance Rth(J.c) Junetion to Case 0.62 h/W
- ouutn. orawings '!,
- g g -
- l gs v !
-W wress-b -
e.- i !
.. o e -
g , s . .
. I i
D.ANo. fleM -
- I 1: ', l
, t ! 40.0 MAX i , ;
t s g
, - jg;R
- I --
-- g at=o l1 i .
i g . ipp -
., [ ,
rs s -
- l.
J ft.s
! a
. i i r
4
%$6t@$ib :
p . ii ;. g y - 2v , - - , t 2..u .v9 ' E~o N Y is M m$r$ 3. E9S @-X) KW/ - g 4.imMMA*6 16".9 9 JEDEC---TO-h -
. 10.220.2 EIAJ ---TC-3 l TB-3. :
DATE 4 NAME 2 APPA0VED [
-c . . . . NN l-MS530147 % v:__g _
. APR 26 '95 10:00 TNTEGRATED_ RESOURCE 402.873 5859 P.1/18 G - NTEGR TED RESOURCES, INC.
.=
FAX TRANSHITTAL SHEET Date : y / 24 / q.[ From: Integrated Resources, Inc PO Box 310 Nebraska City, NE. 68410 FAX (402) 873-5809 Phone (402) 873-5859 Number of pagcn (including this sheet) : M. S. rinc company:
***** "** Kipeo De Rmi J4-D -20 eed hun SU PPL V kCro m m EH Da rad C AJn S O ?& DST *d a NrAfrYWS fleriens ' Eufar hlo. 38525
/
Note : if any of these fax copies are illegible, or you do not . receive the same number of pages as stated above, please j contact us immediately at: (402) 873-5859- j l
. - - - . = . _
P.O. BOX 310 - NEBRASKA CITY,- NE 68410. e,- (402) 87&S859 ' .. .. . j}}